page 1 features ? optimized for cw, pulsed, wimax, w-cdma, lte, and other applications from dc to 6ghz ? 100% rf tested at 2500mhz ? 5w p3db cw power ? 15.5db power gain ? low cost, surface mount soic package ? high reliability gold metallization process ? lead-free and rohs compliant ? subject to ear99 export control dc - 6000mhz 5 watt, 28 volt gan hemt rf performance (cw): v ds = 28v, i dq = 50ma, frequency = 2500mhz, t c = 25c, measured in nitronex test fixture symbol parameter typ units p 3db average output power at 3db compression 5.1 w p 1db average output power at 1db compression 2.9 w h drain effciency at 3db compression 56 % ofdm performance: v ds = 28v, i dq = 100ma, single carrier ofdm waveform 64-qam 3/4, 8 burst, continuous frame data, 3.5 mhz channel bandwidth. peak/avg. = 10.3db @ 0.01% probability on ccdf. frequency = 3500mhz, p out, avg = 24dbm, t c = 25c. measured in load pull system symbol parameter typ units g p power gain 11. 2 db h drain effciency 9 % evm error vector magnitude 1.0 % gallium nitride 28v, 5w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology 2-tone specifcations: v ds = 28v, i dq = 50ma, frequency = 2500mhz, tone spacing = 1mhz, t c = 25c measured in nitronex test fixture symbol parameter min typ max units p 1db,pep peak envelope power at 1db compression 5.0 7. 5 - w g ss small signal gain 14.5 15.5 - db p imd3 peak envelope power at -35dbc imd3 - 2.5 - w h drain effciency at 3db compression 55 60 - % NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 2 symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 2ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - 0.5 2 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 2ma) -2.0 -1.5 -1.0 v v gsq gate quiescent voltage (v ds = 28v, i d = 50ma) -1.8 -1.3 -0.8 v r on on resistance (v gs = 2v, i d = 15ma) - 2.0 2.2 w i d drain current (v ds = 7v pulsed, 300 ms pulse width, 0.2% duty cycle, v gs = 2v) 1.1 1.3 - a dc specifcations: t c =25c absolute maximum ratings: not simultaneous, t c =25c unless otherwise noted symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v p t total device power dissipation (derated above 25c) 7.6 w q jc thermal resistance (junction-to-case) 23 c/w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 1a (>250v) mm machine model esd rating (per jesd22-a115) m1(>50v) msl moisture sensitivity level (per ipc/jedec j-std-020): rating of 3 at 260 c package peak temperature NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 3 z s is the source impedance presented to the device. z l is the load impedance presented to the device. table 1: optimum source and load impedances (v ds = 28v) frequency z s (w) z l (w) i dq (ma) optimized tuning condtion 900 9.2 + j23.8 52.6 + j22.8 50 cw power and effciency 1800 5.2 + j0.5 24.5 + j18.3 50 cw power and effciency 2140 5.0 - j2.6 17.1 + j15.0 50 cw power and effciency 2500 5.4 - j10.5 14.7 + j10.0 50 cw power and effciency 3500 5.0 - j21.0 11.2 + j4.7 50 cw power and effciency 900 21.9 + j43.4 59.5 + j33.7 100 w-cdma, p out, effciency, -45dbc acpr 1800 13.1 + j24.3 34.5 + j48.8 100 w-cdma, p out, effciency, -45dbc acpr 2140 5.4 + j17.3 25.4 + j36.4 100 w-cdma, p out, effciency, -45dbc acpr 2600 4.0 + j6.8 12.2 + j25.8 100 lte, p out, effciency, -45dbc acpr 2500 5.0 + j16.2 13.2 + j20.4 100 ofdm, maximum p out, 1.5% evm 3500 4.1 - j0.6 6.6 + j10.5 100 ofdm, maximum p out, 1.5% evm 5100 17.8 - j16.4 10.7 - j4.9 100 ofdm, maximum p out, 1.5% evm 5200 21.5 - j29.0 11.9 - j4.8 100 ofdm, maximum p out, 1.5% evm 5700 10.2 - j13.2 11.3 - j17.0 100 ofdm, maximum p out, 1.5% evm 5800 11.0 - j16.3 12.1 - j15.3 100 ofdm, maximum p out, 1.5% evm figure 1 - impedances for optimum cw power, v ds = 28v, i dq = 50ma load-pull data, reference plane at device leads v ds =28v, t a =25c unless otherwise noted NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 4 figure 2 - typical cw performance frequency = 900mhz figure 3 - typical cw performance frequency = 2500mhz figure 4 - typical cw performance frequency = 3500mhz figure 5 - typical cw performance frequency = 900 to 3500mhz figure 6 - typical cw performance over temperature, frequency = 2500mhz figure 7 - typical ofdm performance i dq = 100ma, frequency = 2500mhz load-pull data, reference plane at device leads v ds =28v, i dq =50ma, t a =25c unless otherwise noted. NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 5 load-pull data, reference plane at device leads v ds =28v, i dq =50ma, t a =25c unless otherwise noted. figure 8 - typical ofdm performance i dq = 100ma, frequency = 3500mhz figure 9 - typical w-cdma performance i dq = 100ma, frequency = 900mhz figure 10 - typical w-cdma performance i dq = 100ma, frequency = 1800mhz figure 11 - typical w-cdma performance i dq = 100ma, frequency = 2140mhz figure 12 - typical lte performance i dq = 100ma, frequency = 2600mhz NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 6 figure 13 - power derating curve figure 14 - mttf of nrf1 devices as a function of junction temperature figure 15 - quiescient gate voltage (v gsq ) required to reach i dq = 50ma as a function of ambient temperature typical device characteristics v ds =28v, i dq =50ma, t a =25c unless otherwise noted. NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 7 figure 16 - app-NPTB00004-25 2500mhz demonstration board figure 17 - app-NPTB00004-25 2500mhz demonstration board equivalent circuit NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 8 table 2: app-NPTB00004-25 2500mhz demonstration board bill of materials name value tolerance vendor vendor number c1 10uf 20% avx taja10 6m016r c2 1uf 10% avx 12101c105kat2a c3 0.1uf 10% murata grm188r72a104ka35d c4 0.01uf 10% avx 06031c103kat2a c5 0.001uf 10% avx 06031c102k at2a c6 33pf 5% atc atc600f330b c7 100uf 20% panasonic ece-v1ja101p c8 1uf 10% avx 12101c105kat2a c9 0.1uf 10% murata grm188r72a104ka35d c10 0.01uf 10% avx 06031c103kat2a c11 0.001uf 10% avx 06031c102k at2a c12 33pf 5% atc atc600f330b c13 2.7pf +/- 0.1pf atc atc600f2r7b c14 10pf 1% atc atc600f100b c15 0.8pf +/- 0.1pf atc atc600f0r8b c16 3.3pf +/- 0.1pf atc atc600f3r3b r1 200 ohm 1% panasonic erj-2gej201x r3, r5 0 ohm -- panasonic erj-2ge0r00x r4 0.033 ohm 1% panasonic erj-6bwjr033w nbd-012_rev1 -- -- alberta printed circuits nbd-012_rev1 substrate rogers r04350, t = 30mil e r = 3.5 NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 9 d package dimensions and pinout mounting footprints part number order multiple description NPTB00004dt 97 tube; NPTB00004 in d (psop2) package NPTB00004dr 1500 tape and reel; NPTB00004 in d (psop2) package inches millimeters dim min max min max a 0.18 9 0.19 6 4.80 4.98 b 0.15 0 0.157 3.81 3.99 c 0.107 0.123 2.72 3.12 d 0.071 0.087 1.80 2.21 e 0.230 0.244 5.84 6.19 f 0.050 bsc 1.270 bsc f 0.0138 0.0192 0.35 0.49 g 0.055 0.061 1.40 1.55 g1 0.000 0.004 0.00 0.10 h 0.0075 0.0098 0.19 0.25 l 0.016 0.035 0.41 0.89 m 0 8 0 8 1 2 3 4 8 6 5 7 9 cha m f er 1. n c 2 . g a t e 3 . g a t e 4. n c 7. d r ain 6 . drain 5 . nc 8. n c 9 . sou r c e pa d ( b o t t om) e b d c a f (6x) f (8x) g 1 s e a t ing p lan e g m s e a ting p l a n e l h a/2 d / 2 .150 solder paste .080" x .120" (typ) solder paste .020" x .040" (8x typ) .100 .105 .176 .145 .140 heat sink pedestal pwb cutout r.016 (4x typ) .055 .180 .030 pwb pad (8x typ) solder mask .005" relief (typ) 1. nc 2. gate 3. gate 4. nc 5. nc 6. drain 7. drain 8. nc 9. source pad (bottom) ordering information 1 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com NPTB00004 nds-002 rev 7, april 2013 NPTB00004
page 10 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. NPTB00004 nds-002 rev 7, april 2013 NPTB00004
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